@inproceedings{9528a98ca3a3472499a88bd90989b779,
title = "ALD Grown Rare-Earth High-k Oxides on Ge: Lowering of the Interface Trap Density and EOT Scalability",
abstract = "Y2O3 and L2O3/ZrO2 stacks have been examined in terms of their electrical properties in Ge capacitors. It is discussed that scaling of L2O3/ZrO2 stacks into the sub 1 nm EOT regime can been achieved either by using thin amorphous La2O3 capped by a thin ZrO2 layer or by stabilizing the tetragonal or cubic very high-k phase of ZrO2 induced by diffused La and Ge atoms during a PDA step. Y2O3 shows very good interfacial qualities in terms of a low interface trap density and hysteresis when an annealing in O-2 atmosphere is applied. Fowler-Nordheim tunneling is identified as the primary leakage current mechanism at high gate bias whereas for the low bias regime leakage current is primarily conducted by direct tunneling through the Y2O3 layer.",
keywords = "Electrical-properties, Zro2 phase, Stabilization, Dielectrics, Stacks, Films",
author = "O. Bethge and C. Zimmermann and B. Lutzer and S. Simsek and S. Abermann and E. Bertagnolli",
year = "2014",
doi = "10.1149/06408.0069ecst",
language = "English",
volume = "64",
series = "Ecs Transactions",
pages = "69--76",
editor = "S Kar and S VanElshocht and K Kita and S Dayeh and M Houssa and D Misra and D Landheer and H Jagannathan",
booktitle = "Semiconductors, Dielectrics, And Metals For Nanoelectronics 12",
note = "12th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics held during the 226th Meeting of The Electrochemical-Society ; Conference date: 05-10-2014 Through 10-10-2014",
}