Chemical Vapor Deposition of MoS2 on and in TiN Coatings

MoS2 is deposited from a MoCl5/H2S/H2 gas mixture in a hot wall reactor. The whole process including the powder formation and the film formation is investigated. It is found that the deposition rate changes not strongly at the transition from powder to the coating deposition. The explanation is that also in the film formation range particles are performed in the gas phase. The size of the particles is determined by TEM, SEM, BET and thermophoretic investigations. The diameter range of the particles were 15 - 100 nm. TiN-MoS2 deposition experiments from MoCl5/H2S/H2/N2/TiCl4 gas mixtures indicate that the S-activity in the gas phase plays an important role.