Comparative study on the impact of TiN and Mo metal gates on MOCVD-grown HfO<inf>2</inf> and ZrO<inf>2</inf> high-κ dielectrics for CMOS technology

Publikation: Beitrag in Buch oder Tagungsband › Vortrag mit Beitrag in Tagungsband › Begutachtung

Research Field

@inproceedings{a10ba31345c7421dbe8bce7200d6a412,

title = "Comparative study on the impact of TiN and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-κ dielectrics for CMOS technology",

author = "S. Abermann and G. Sjoblom and J. Efavi and M. Lemme and J. Olsson and E. Bertagnolli",

year = "2007",

doi = "10.1063/1.2729883",

language = "Undefined/Unknown",

booktitle = "AIP Conference Proceedings",

}

TY - GEN

T1 - Comparative study on the impact of TiN and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-κ dielectrics for CMOS technology

AU - Abermann, S.

AU - Sjoblom, G.

AU - Efavi, J.

AU - Lemme, M.

AU - Olsson, J.

AU - Bertagnolli, E.

PY - 2007

Y1 - 2007

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-77958473381&partnerID=MN8TOARS

U2 - 10.1063/1.2729883

DO - 10.1063/1.2729883

M3 - Vortrag mit Beitrag in Tagungsband

BT - AIP Conference Proceedings

ER -