Electrical characteristics of atomic layer deposited aluminium oxide and lanthanum-zirconium oxide high-k dielectric stacks

Publikation: Beitrag in Buch oder Tagungsband › Vortrag mit Beitrag in Tagungsband › Begutachtung

Originalsprache	undefiniert/unbekannt
Titel	Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
DOIs	https://doi.org/10.1109/ULIS.2009.4897573
Publikationsstatus	Veröffentlicht - 2009

Research Field

@inproceedings{ba2339e23350468ab5512287ef6aa101,

title = "Electrical characteristics of atomic layer deposited aluminium oxide and lanthanum-zirconium oxide high-k dielectric stacks",

author = "S. Abermann and C. Henkel and O. Bethge and E. Bertagnolli",

year = "2009",

doi = "10.1109/ULIS.2009.4897573",

language = "Undefined/Unknown",

booktitle = "Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009",

}

Electrical characteristics of atomic layer deposited aluminium oxide and lanthanum-zirconium oxide high-k dielectric stacks. / Abermann, S.; Henkel, C.; Bethge, O. et al.
Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009. 2009.

Publikation: Beitrag in Buch oder Tagungsband › Vortrag mit Beitrag in Tagungsband › Begutachtung

TY - GEN

T1 - Electrical characteristics of atomic layer deposited aluminium oxide and lanthanum-zirconium oxide high-k dielectric stacks

AU - Abermann, S.

AU - Henkel, C.

AU - Bethge, O.

AU - Bertagnolli, E.

PY - 2009

Y1 - 2009

UR - https://www.scopus.com/pages/publications/67650687419

U2 - 10.1109/ULIS.2009.4897573

DO - 10.1109/ULIS.2009.4897573

M3 - Vortrag mit Beitrag in Tagungsband

BT - Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

ER -