Ge p-MOSFETs with scaled ALD La2O3/ZrO2 Gate Dielectrics

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Originalsprache	Englisch
Seiten (von - bis)	3295-3302
Seitenumfang	8
Fachzeitschrift	IEEE Transactions on Electron Devices
Volume	57
Issue	12
Publikationsstatus	Veröffentlicht - 2010

Research Field

@article{56b35da41dcd46a88c68cd22bfabaada,

title = "Ge p-MOSFETs with scaled ALD La2O3/ZrO2 Gate Dielectrics",

author = "C. Henkel and Stephan Abermann and O. Bethge and G. Pozzovivo and P. Klang and M. Reiche and E. Bertagnolli",

year = "2010",

language = "English",

volume = "57",

pages = "3295--3302",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Ge p-MOSFETs with scaled ALD La2O3/ZrO2 Gate Dielectrics

AU - Henkel, C.

AU - Abermann, Stephan

AU - Bethge, O.

AU - Pozzovivo, G.

AU - Klang, P.

AU - Reiche, M.

AU - Bertagnolli, E.

PY - 2010

Y1 - 2010

M3 - Article

SN - 0018-9383

VL - 57

SP - 3295

EP - 3302

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -