Impact of germanium surface conditioning and ALD-growth temperature on Al<inf>2</inf>O<inf>3</inf>/ZrO<inf>2</inf> high-k dielectric stacks

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Originalsprache	undefiniert/unbekannt
Fachzeitschrift	Journal of the Electrochemical Society
DOIs	https://doi.org/10.1149/1.3205455
Publikationsstatus	Veröffentlicht - 2009

Research Field

@article{074f72d1775a42e4974944ee2badc23a,

title = "Impact of germanium surface conditioning and ALD-growth temperature on Al2O3/ZrO2 high-k dielectric stacks",

author = "O. Bethge and S. Abermann and C. Henkel and C.J. Straif and H. Hutter and E. Bertagnolli",

year = "2009",

doi = "10.1149/1.3205455",

language = "Undefined/Unknown",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

}

TY - JOUR

T1 - Impact of germanium surface conditioning and ALD-growth temperature on Al2O3/ZrO2 high-k dielectric stacks

AU - Bethge, O.

AU - Abermann, S.

AU - Henkel, C.

AU - Straif, C.J.

AU - Hutter, H.

AU - Bertagnolli, E.

PY - 2009

Y1 - 2009

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-69549105975&partnerID=MN8TOARS

U2 - 10.1149/1.3205455

DO - 10.1149/1.3205455

M3 - Artikel

SN - 0013-4651

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

ER -