TY - JOUR
T1 - Processing and evaluation of metal gate/high-κ/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-κ dielectric
AU - Abermann, S.
AU - Efavi, J. K.
AU - Sjoblom, G.
AU - Lemme, M. C.
AU - Olsson, J.
AU - Bertagnolli, E.
PY - 2007
Y1 - 2007
N2 - We evaluate various metal gate/high-K/Si capacitors by their resulting electrical characteristics. Therefore, we process MOS gate stacks incorporating aluminium (Al), nickel (Ni), titanium-nitride (TiN), and molybdenum (Mo) as the gate material, and metal organic chemical vapour deposited (MOCVD) ZrO2 and HfO2 as the gate dielectric, respectively. The influence of the processing sequence - especially of the thermal annealing treatment - on the electrical characteristics of the various gate stacks is being investigated. Whereas post metallization annealing in forming gas atmosphere improves capacitance-voltage behaviour (due to reduced interface-, and oxide charge density), current-voltage characteristics degrade due to a higher leakage current after thermal treatment at higher temperatures. The Flatband-voltage values for the TiN-, Mo-, and Ni-capacitors indicate mid-gap pinning of the metal gates, however, Ni seems to be thermally unstable on ZrO2, at least within the process scheme we applied. (c) 2007 Elsevier B.V. All rights reserved.
AB - We evaluate various metal gate/high-K/Si capacitors by their resulting electrical characteristics. Therefore, we process MOS gate stacks incorporating aluminium (Al), nickel (Ni), titanium-nitride (TiN), and molybdenum (Mo) as the gate material, and metal organic chemical vapour deposited (MOCVD) ZrO2 and HfO2 as the gate dielectric, respectively. The influence of the processing sequence - especially of the thermal annealing treatment - on the electrical characteristics of the various gate stacks is being investigated. Whereas post metallization annealing in forming gas atmosphere improves capacitance-voltage behaviour (due to reduced interface-, and oxide charge density), current-voltage characteristics degrade due to a higher leakage current after thermal treatment at higher temperatures. The Flatband-voltage values for the TiN-, Mo-, and Ni-capacitors indicate mid-gap pinning of the metal gates, however, Ni seems to be thermally unstable on ZrO2, at least within the process scheme we applied. (c) 2007 Elsevier B.V. All rights reserved.
KW - HfO2
KW - Mocvd
KW - ZrO2
KW - High-kappa
KW - Metal gate
KW - Processing
UR - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=ait_230127_woslite_expandedapikey&SrcAuth=WosAPI&KeyUT=WOS:000247182500223&DestLinkType=FullRecord&DestApp=WOS_CPL
U2 - 10.1016/j.mee.2007.01.176
DO - 10.1016/j.mee.2007.01.176
M3 - Article
SN - 0167-9317
VL - 84
SP - 1635
EP - 1638
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 5-8
T2 - 32nd International Conference on Micro- and Nano-Engineering
Y2 - 17 September 2006 through 20 September 2006
ER -