@article{2c5db861ad6b4026880e2b13d818856d,
title = "Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2",
author = "J. Kuzmik and G. Pozzovivo and S. Abermann and J.-F. Carlin and M. Gonschorek and E. Feltin and N. Grandjean and E. Bertagnolli and G. Strasser and D. Pogany",
year = "2008",
doi = "10.1109/TED.2007.915089",
language = "English",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
}