TEM Study on Diffusion Process of NiFe Schottky and MgO/NiFe Tunneling Diodes for Spin Injection in Silicon

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Originalsprache	Englisch
Seiten (von - bis)	2067
Seitenumfang	1
Fachzeitschrift	IEEE Transactions on Magnetics
Volume	46
Publikationsstatus	Veröffentlicht - 2010

Research Field

@article{bd32a475c9ee4abf85fd8246acd02885,

title = "TEM Study on Diffusion Process of NiFe Schottky and MgO/NiFe Tunneling Diodes for Spin Injection in Silicon",

author = "S.L. Lee and T. Uhrmann and Theodoros Dimopoulos and J Fiddler and H. Br{\"u}ckl",

year = "2010",

language = "English",

volume = "46",

pages = "2067",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}