Correlative Microscopy and Spectroscopy of Perovskite Thin Films: Degradation Analysis

Perovskite materials have excellent prospects for semiconducting applications due to their desirable photoelectric properties. The morphology and the structure of the light absorption layer are crucially important for the device performance and their changes through the degradation period are of upmost importance for understanding degradation pathways. In this work, pristine perovskite thin films with and without FACl additives in the active perovskite layer have been characterized with Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and Energy-Dispersive Spectroscopy (EDX) to identify changes in the perovskite grain size, grain boundaries and current densities. Moreover, femtosecond transient transmission measurements have been employed to detect changes in carrier relaxation dynamics in encapsulated perovskite thin films before and after outdoor exposure.