Identifying the potential of SiC technology for PV inverters

Troy Clinton Eskilson; Andreas Jehle; Peter Schmidt; Markus Leopold Makoschitz; Franz Baumgartner

doi:10.23919/EPE23ECCEEurope58414.2023.10264500

Identifying the potential of SiC technology for PV inverters

Troy Clinton Eskilson
, Andreas Jehle
, Peter Schmidt
, Markus Leopold Makoschitz (Speaker)
, Franz Baumgartner

Zurich University of Applied Sciences (ZHAW)

Research output: Chapter in Book or Conference Proceedings › Conference Proceedings with Oral Presentation

Abstract

Silicon Carbide (SiC) devices offer energy
efficiency improvements over conventional
silicon (Si) semiconductors. Through
measurements and simulation results, this paper
intends to quantify this efficiency improvement in
a typical photovoltaic (PV) application. This
allows designers and policy makers to better
understand the benefits of SiC, enabling more
informed decisions.

Original language	English
Title of host publication	IEEE EPE 2023 Conference Proceedings
Number of pages	7
DOIs	https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264500
Publication status	Published - Sept 2023
Event	2023 EPE'23 ECCE Europe - Aalborg, Denmark Duration: 4 Sept 2023 → 8 Sept 2023 https://epe2023.com/

Conference

Conference	2023 EPE'23 ECCE Europe
Country/Territory	Denmark
City	Aalborg
Period	4/09/23 → 8/09/23
Internet address	https://epe2023.com/

Research Field

Power Electronics and System Components

Access to Document

10.23919/EPE23ECCEEurope58414.2023.10264500

Cite this

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title = "Identifying the potential of SiC technology for PV inverters",

abstract = "Silicon Carbide (SiC) devices offer energy efficiency improvements over conventional silicon (Si) semiconductors. Through measurements and simulation results, this paper intends to quantify this efficiency improvement in a typical photovoltaic (PV) application. This allows designers and policy makers to better understand the benefits of SiC, enabling more informed decisions.",

author = "Eskilson, \{Troy Clinton\} and Andreas Jehle and Peter Schmidt and Makoschitz, \{Markus Leopold\} and Franz Baumgartner",

year = "2023",

month = sep,

doi = "10.23919/EPE23ECCEEurope58414.2023.10264500",

language = "English",

booktitle = "IEEE EPE 2023 Conference Proceedings",

note = "2023 EPE'23 ECCE Europe ; Conference date: 04-09-2023 Through 08-09-2023",

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TY - GEN

T1 - Identifying the potential of SiC technology for PV inverters

AU - Eskilson, Troy Clinton

AU - Jehle, Andreas

AU - Schmidt, Peter

AU - Baumgartner, Franz

A2 - Makoschitz, Markus Leopold

PY - 2023/9

Y1 - 2023/9

N2 - Silicon Carbide (SiC) devices offer energy efficiency improvements over conventional silicon (Si) semiconductors. Through measurements and simulation results, this paper intends to quantify this efficiency improvement in a typical photovoltaic (PV) application. This allows designers and policy makers to better understand the benefits of SiC, enabling more informed decisions.

AB - Silicon Carbide (SiC) devices offer energy efficiency improvements over conventional silicon (Si) semiconductors. Through measurements and simulation results, this paper intends to quantify this efficiency improvement in a typical photovoltaic (PV) application. This allows designers and policy makers to better understand the benefits of SiC, enabling more informed decisions.

UR - https://xploreqa.ieee.org/document/10264500

U2 - 10.23919/EPE23ECCEEurope58414.2023.10264500

DO - 10.23919/EPE23ECCEEurope58414.2023.10264500

M3 - Conference Proceedings with Oral Presentation

BT - IEEE EPE 2023 Conference Proceedings

T2 - 2023 EPE'23 ECCE Europe

Y2 - 4 September 2023 through 8 September 2023

ER -

Identifying the potential of SiC technology for PV inverters

Abstract

Conference

Research Field

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