Interface states and trapping effects in Al<inf>2</inf>O<inf>3</inf>- and ZrO<inf>2</inf>/InAlN/AlN/GaN metal-oxide-semiconductor heterostructures

M. Ťapajna; J. Kuzmík; K. Čičo; D. Pogany; G. Pozzovivo; G. Strasser; S. Abermann; E. Bertagnolli; J.-F. Carlin; N. Grandjean

doi:10.1143/JJAP.48.090201

Interface states and trapping effects in Al<inf>2</inf>O<inf>3</inf>- and ZrO<inf>2</inf>/InAlN/AlN/GaN metal-oxide-semiconductor heterostructures

M. Ťapajna
, J. Kuzmík
, K. Čičo
, D. Pogany
, G. Pozzovivo
, G. Strasser
, S. Abermann
, E. Bertagnolli
, J.-F. Carlin
, N. Grandjean

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Japanese Journal of Applied Physics
DOIs	https://doi.org/10.1143/JJAP.48.090201
Publication status	Published - 2009

Research Field

Energy Conversion and Hydrogen Technologies

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10.1143/JJAP.48.090201

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Ťapajna, M., Kuzmík, J., Čičo, K., Pogany, D., Pozzovivo, G., Strasser, G., Abermann, S., Bertagnolli, E., Carlin, J.-F., & Grandjean, N. (2009). Interface states and trapping effects in Al<inf>2</inf>O<inf>3</inf>- and ZrO<inf>2</inf>/InAlN/AlN/GaN metal-oxide-semiconductor heterostructures. Japanese Journal of Applied Physics. https://doi.org/10.1143/JJAP.48.090201

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title = "Interface states and trapping effects in Al2O3- and ZrO2/InAlN/AlN/GaN metal-oxide-semiconductor heterostructures",

author = "M. {\v T}apajna and J. Kuzm{\'i}k and K. {\v C}i{\v c}o and D. Pogany and G. Pozzovivo and G. Strasser and S. Abermann and E. Bertagnolli and J.-F. Carlin and N. Grandjean",

year = "2009",

doi = "10.1143/JJAP.48.090201",

language = "English",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

}

TY - JOUR

T1 - Interface states and trapping effects in Al2O3- and ZrO2/InAlN/AlN/GaN metal-oxide-semiconductor heterostructures

AU - Ťapajna, M.

AU - Kuzmík, J.

AU - Čičo, K.

AU - Pogany, D.

AU - Pozzovivo, G.

AU - Strasser, G.

AU - Abermann, S.

AU - Bertagnolli, E.

AU - Carlin, J.-F.

AU - Grandjean, N.

PY - 2009

Y1 - 2009

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-77952735255&partnerID=MN8TOARS

U2 - 10.1143/JJAP.48.090201

DO - 10.1143/JJAP.48.090201

M3 - Article

SN - 0021-4922

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

ER -

Interface states and trapping effects in Al<inf>2</inf>O<inf>3</inf>- and ZrO<inf>2</inf>/InAlN/AlN/GaN metal-oxide-semiconductor heterostructures

Research Field

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