Stabilization of a very high-k crystalline ZrO <inf>2</inf> phase by post deposition annealing of atomic layer deposited ZrO <inf>2</inf> /La <inf>2</inf> O <inf>3</inf> dielectrics on germanium

S. Abermann; C. Henkel; O. Bethge; G. Pozzovivo; P. Klang; E. Bertagnolli

doi:10.1016/j.apsusc.2010.03.049

Stabilization of a very high-k crystalline ZrO <inf>2</inf> phase by post deposition annealing of atomic layer deposited ZrO <inf>2</inf> /La <inf>2</inf> O <inf>3</inf> dielectrics on germanium

S. Abermann
, C. Henkel
, O. Bethge
, G. Pozzovivo
, P. Klang
, E. Bertagnolli

Power and Renewable Gas Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Applied Surface Science
DOIs	https://doi.org/10.1016/j.apsusc.2010.03.049
Publication status	Published - 2010

Research Field

Energy Conversion and Hydrogen Technologies

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10.1016/j.apsusc.2010.03.049

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@article{1c41d219c44e4f669e0fde49cd9ec5f1,

title = "Stabilization of a very high-k crystalline ZrO 2 phase by post deposition annealing of atomic layer deposited ZrO 2 /La 2 O 3 dielectrics on germanium",

author = "S. Abermann and C. Henkel and O. Bethge and G. Pozzovivo and P. Klang and E. Bertagnolli",

year = "2010",

doi = "10.1016/j.apsusc.2010.03.049",

language = "Undefined/Unknown",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Stabilization of a very high-k crystalline ZrO 2 phase by post deposition annealing of atomic layer deposited ZrO 2 /La 2 O 3 dielectrics on germanium

AU - Abermann, S.

AU - Henkel, C.

AU - Bethge, O.

AU - Pozzovivo, G.

AU - Klang, P.

AU - Bertagnolli, E.

PY - 2010

Y1 - 2010

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-77950916988&partnerID=MN8TOARS

U2 - 10.1016/j.apsusc.2010.03.049

DO - 10.1016/j.apsusc.2010.03.049

M3 - Artikel

SN - 0169-4332

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Stabilization of a very high-k crystalline ZrO <inf>2</inf> phase by post deposition annealing of atomic layer deposited ZrO <inf>2</inf> /La <inf>2</inf> O <inf>3</inf> dielectrics on germanium

Research Field

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