Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO<inf>2</inf> or HfO<inf>2</inf>

J. Kuzmik; G. Pozzovivo; S. Abermann; J.-F. Carlin; M. Gonschorek; E. Feltin; N. Grandjean; E. Bertagnolli; G. Strasser; D. Pogany

doi:10.1109/TED.2007.915089

Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO<inf>2</inf> or HfO<inf>2</inf>

J. Kuzmik
, G. Pozzovivo
, S. Abermann
, J.-F. Carlin
, M. Gonschorek
, E. Feltin
, N. Grandjean
, E. Bertagnolli
, G. Strasser
, D. Pogany

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2007.915089
Publication status	Published - 2008

Research Field

Energy Conversion and Hydrogen Technologies

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10.1109/TED.2007.915089

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Kuzmik, J., Pozzovivo, G., Abermann, S., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Bertagnolli, E., Strasser, G., & Pogany, D. (2008). Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO<inf>2</inf> or HfO<inf>2</inf> IEEE Transactions on Electron Devices. https://doi.org/10.1109/TED.2007.915089

@article{2c5db861ad6b4026880e2b13d818856d,

title = "Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2",

author = "J. Kuzmik and G. Pozzovivo and S. Abermann and J.-F. Carlin and M. Gonschorek and E. Feltin and N. Grandjean and E. Bertagnolli and G. Strasser and D. Pogany",

year = "2008",

doi = "10.1109/TED.2007.915089",

language = "English",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2

AU - Kuzmik, J.

AU - Pozzovivo, G.

AU - Abermann, S.

AU - Carlin, J.-F.

AU - Gonschorek, M.

AU - Feltin, E.

AU - Grandjean, N.

AU - Bertagnolli, E.

AU - Strasser, G.

AU - Pogany, D.

PY - 2008

Y1 - 2008

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-40949121073&partnerID=MN8TOARS

U2 - 10.1109/TED.2007.915089

DO - 10.1109/TED.2007.915089

M3 - Article

SN - 0018-9383

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -

Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO<inf>2</inf> or HfO<inf>2</inf>

Research Field

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